SPW35N60C3_05 Datasheet, PDF (3/11 Pages) Infineon Technologies AG – CoolMOSTM Power Transistor

Parameter
Symbol Conditions
SPW35N60C3
min.
Values
typ.
Unit
max.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
C _iss
-
C _oss
V _GS=0 V, V _DS=25 V,
f =1 MHz
-
C _rss
-
Effective output capacitance, energy
related³⁾
C _o(er)
-
V _GS=0 V, V _DS=0 V
to 480 V
Effective output capacitance, time
related⁴⁾
C _o(tr)
-
Turn-on delay time
Rise time
Turn-off delay time
Fall time
t _d(on)
-
t_r
V _DD=480 V,
-
V _GS=10 V, I _D=34.6 A,
t _d(off)
R _G=3.3 Ω
-
t_f
-
4500
1500
100
180
324
10
5
70
10
- pF
-
-
-
-
- ns
-
-
-
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Q _gs
Q _gd
Q_g
V _plateau
V _DD=480 V,
I _D=34.6 A,
V _GS=0 to 10 V
-
18
- nC
-
70
-
-
150
200
-
5.3
-V
1) _{Pulse width limited by maximum temperature T j,max only}
2) _{Repetitive avalanche causes additional power losses that can be calculated as P AV=E AR*f.}
3) _{C o(er) is a fixed capacitance that gives the same stored energy as C oss while V DS is rising from 0 to 80% V DSS.}
4) _{C o(tr) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 80% V DSS.}
6) _{ISD<=ID, di/dt<=200A/us, VDClink=400V, Vpeak<VBR, DSS, Tj<Tj,max.}
Identical low-side and high-side switch.
Rev. 2.4
Page 3
2005-09-21