SPW11N60CFD_08 Datasheet, PDF (3/13 Pages) Infineon Technologies AG – Cool MOS™ Power Transistor

SPW11N60CFD
Electrical Characteristics , at T_j = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Values
Unit
min. typ. max.
Transconductance
g _fs
Input capacitance
Output capacitance
Reverse transfer capacitance
Effective output capacitance,²⁾
energy related
C_iss
C_oss
C_rss
C_o(er)
V_DS≥2*I _D*R_DS(on)max,
I_D=7A
V_GS=0V, V_DS=25V,
f=1MHz
V _GS=0V,
V_DS=0V to 480V
-
8.3
-S
- 1200 - pF
- 390 -
-
30
-
-
45
- pF
Effective output capacitance,³⁾ C_o(tr)
time related
-
85
-
Turn-on delay time
Rise time
Turn-off delay time
Fall time
t_d(on)
V_DD=380V, V_GS=0/10V,
-
34
- ns
t_r
I_D=11A, R_G=6.8Ω
-
18
-
t_d(off)
-
43
-
t_f
-
7
-
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Q_gs
Q_gd
Q_g
V_DD=480V, I_D=11A
VDD=480V, ID=11A,
V_GS=0 to 10V
Gate plateau voltage
V_(plateau) VDD=480V, I D=11A
-
9
- nC
-
23
-
-
48 64
-
7
-V
1Repetitve _{avalanche causes additional power losses that can be calculated as PAV=EAR*f.}
2_{Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS.}
3_{Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.}
Rev. 2.5
Page 3
2008-04-17
Please note the new package dimensions arccording to PCN 2009-134-A