SPW11N60C3 Datasheet, PDF (3/12 Pages) Infineon Technologies AG – Cool MOS Power Transistor

Final data
SPW11N60C3
Electrical Characteristics , at T_j = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Values
Unit
min. typ. max.
Transconductance
g_fs
V_DS≥2*I_D*R_DS(on)max,
-
8.3
-S
I_D=7A
Input capacitance
C_iss
Output capacitance
C_oss
Reverse transfer capacitance C_rss
Effective output capacitance,²⁾ C_o(er)
energy related
Effective output capacitance,³⁾ C_o(tr)
time related
V_GS=0V, V_DS=25V,
f=1MHz
V_GS=0V,
V_DS=0V to 480V
- 1200 - pF
- 390 -
-
30
-
-
45
- pF
-
85
-
Turn-on delay time
Rise time
Turn-off delay time
Fall time
t_d(on)
V_DD=380V, V_GS=0/10V,
-
t_r
I_D=11A, R_G=6.8Ω
-
t_d(off)
-
t_f
-
10
- ns
5
-
44 70
5
9
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Q_gs
Q_gd
V_DD=480V, I_D=11A
Gate charge total
Q_g
V_DD=480V, I_D=11A,
V_GS=0 to 10V
Gate plateau voltage
V_(plateau) V_DD=480V, I_D=11A
-
5.5
- nC
-
22
-
-
45 60
-
5.5
-V
1Repetitve _{avalanche causes additional power losses that can be calculated asPAV=EAR*f.}
2_{Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS.}
3_{Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.}
Page 3
2003-09-17