SLE66C24PE Datasheet, PDF (3/8 Pages) Infineon Technologies AG – Security & Chip Card ICs

SLE 66C24PE
8/16-Bit Security Controller with enhanced instruction set for large
memories in 0.22µm CMOS Technology, 68-Kbyte ROM, 2304 Bytes
RAM, 2-Kbyte EEPROM and Dual Key Triple DES Accelerator
Features
• 8/16-bit microcomputer in 0.22 µm CMOS
technology
• New
Internal Clock with up to 33 MHz:
Programmable internal frequency (PLL x1, x2, x3, x4
and free running mode(s)).
• Instruction set opcode compatible with standard
SAB 8051 processor
• _New
Adjustable internal frequency according to
available power or required performance
• Downward compatibility to existing
SLE 66CxxxP products for existing masks
• Increased internal clock frequency for maximum
performance
without using the new features
• ^New
Addressable memory up to 16 Mbyte
• New
Additional enhanced instructions for direct
physical memory access of >64kByte
• Internal frequency is automatically adjusted to
guarantee a given limited power
consumption
• Two 16-bit Autoreload Timer
• Typically saves up to 90 % code space and
• Power saving sleep mode
increases execution speed up to 80 %
• Dedicated, non-standard architecture with
execution time 6 times faster than standard SAB
8051 processor at same external clock. (Up to 18
times faster using internal frequency PLL x 3
compared to external clock).
• ^New
68 Kbytes User ROM for application programs
• New
2 Kbytes MicroSlim-EEPROM
• 2Kbytes XRAM, 256 bytes internal RAM
• Enhanced Memory Management and Protection
New
Unit (MMU) with application and user defined
segments
• Ext. Clock freq. 1 up to 7.5 MHz for int. Clock up to
33 MHz
• UART for handling serial interface in accordance
with ISO/IEC 7816 part 3 supporting transmission
protocols T=1 and T=0
• Supply voltage range:1.8 V, 3.0 V, 5.0 V
• Support of current consumption limits by GSM / UICC
applications
< 10 mA @ 5.5 V
< 6 mA @ 3.3 V
< 4 mA @ 1.98 V
• Operating Temperature range: -25 to +85°C
• Dual Key Triple DES (DDES)
• Storing temperature range: –40° to +125°C
• CC EAL5+ certification according to BSI-PP-0002
planned
• True Random Number Generator with Firmware
test function
• ESD protection larger than 6 kV (HBM)
MicroSlim-EEPROM
• Typical Erase + Write time ≤ 2.9 ms
• CRC Module
• ^New
Enhanced ECC module controlled by OS
• 16-bit Interrupt Module
• Reading and programming byte by byte
• • Code executions during E²-programming for faster _New
Platform prepared for flash-like erasing of E²-
personalization
segments up to 2 kB
• EEPROM programming voltage generated on chip
• Flexible page mode for 1 to 64 bytes write/erase
operation
• 32 bytes security area (OTP)
• Fast personalization mode ≤ 1.0 ms
• Minimum of 500.000 write/erase cycles @ 25°C per
page. Maximum of 16.500.000 write/erase cycles per
sector
• Typical data retention of 10 years @ 25°C
Preliminary - Short Product Information 3 / 8
02.04