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SLE66C168PE Datasheet, PDF (3/8 Pages) Infineon Technologies AG – Security & Chip Card ICs
SLE 66C168PE
16-Bit Security Controller with enhanced instruction set for large
memories in 0.22µm CMOS Technology, 68-Kbyte ROM, 2304 Bytes
RAM, 16-Kbyte EEPROM, Dual Key Triple DES Accelerator
Features
New
• 8/16-bit microcomputer in 0.22 µm CMOS technology
• Instruction set opcode compatible with standard
SAB 8051 processor
New
• Downward compatibility to existing SLE 66CxxxP
products for existing masks without using the
new features
• New
Addressable memory up to 16 Mbyte
• New
Additional enhanced instructions for direct
physical memory access of >64kByte
• Typically saves up to 90 % code space and
increases execution speed up to 80 %.
• Dedicated, non-standard architecture with execution
time 6 times faster than standard SAB 8051
processor at same external clock. (Up to 18 times
faster using internal frequency PLL x 3 compared to
external clock).
• New
68 Kbytes User ROM for application programs
• 16 Kbytes MicroSlim-EEPROM
New
• 2 Kbytes XRAM, 256 bytes internal RAM
• Enhanced Memory Management and Protection
New
Unit (MMU) with application and user defined
segments
• Dual Key Triple DES (DDES)
• CC EAL5+ certification according to BSI-PP-0002
planned
• True Random Number Generator with Firmware test
function
• CRC Module
• 16-bit Interrupt Module
New
• Code executions during E²-programming for faster
New
personalization
• EEPROM programming voltage generated on chip
• Internal Clock with up to 33 MHz:
Programmable internal frequency (PLL x1, x2, x3, x4
and free running mode(s)).
• Adjustable frequency according to available power
or required performance
• Increased internal clock frequency for maximum
performance
• Internal frequency is automatically adjusted to
guarantee a given limited power
consumption
• Two 16-bit Autoreload Timer
• Power saving sleep mode
• Ext. Clock freq. 1 up to 7.5 MHz for int. Clock up to
33 MHz
• UART for handling serial interface in accordance
with ISO/IEC 7816 part 3 supporting transmission
protocols T=1 and T=0
• Supply voltage range:1.8 V, 3.0 V, 5.0 V
• Support of current consumption limits by GSM / UICC
applications
< 10 mA @ 5.5 V
< 6 mA @ 3.3 V
< 4 mA @ 1.98 V
• Operating Temperature range: -25 to +85°C
• Storing temperature range: –40° to +125°C
• ESD protection larger than 6 kV (HBM)
MicroSlim-EEPROM
• Typical Erase + Write time ≤ 2.9 ms
• Enhanced ECC module controlled by OS
• Reading and programming byte by byte
• Platform prepared for flash-like erasing of E²-segments
up to 2 kB
• Flexible page mode for 1 to 64 bytes write/erase
operation
• 32 bytes security area (OTP)
• Fast personalization mode ≤ 1.0 ms
• Minimum of 500.000 write/erase cycles @ 25°C per
page. Maximum of 16.500.000 write/erase cycles per
sector
• Typical data retention of 10 years @ 25°C
Preliminary - Short Product Information 3 / 8
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