SKW15N120 Datasheet, PDF (3/13 Pages) Infineon Technologies AG – FAST IGBT IN NPT-TECHNOLOGY WITH SOFT, FAST RECOVERY ANTI-PARALLEL EmCon DIODE

SKW15N120
Switching Characteristic, Inductive Load, at T_j=25 °C
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
t_d(on)
t_r
t_d(off)
t_f
E_on
E_off
E_ts
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during t_F
t_rr
t_S
t_F
Q_rr
I_rrm
di_rr/dt
T_j=25°C,
V_CC=800V,I_C=15A,
V_GE=15V/0V,
R_G=33Ω,
L_σ¹⁾=180nH,
C_σ¹⁾=40pF
Energy losses include
“tail” and diode
reverse recovery.
T_j=25°C,
V_R=800V, I_F=15A,
di_F/dt=650A/µs
min.
-
-
-
-
-
-
-
-
-
-
-
-
-
Value
typ.
18
23
580
22
1.1
0.8
1.9
65
0.5
15
500
Unit
max.
24 ns
30
750
29
1.5 mJ
1.1
2.6
ns
µC
A
A/µs
Switching Characteristic, Inductive Load, at T_j=150 °C
Parameter
Symbol
Conditions
min.
Value
typ.
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
t_d(on)
T_j=150°C
-
38
t_r
V_CC=800V,
-
30
t_d(off)
I_C=15A,
-
652
t_f
V_GE=15V/0V,
-
31
E_on
E_off
E_ts
R_G=33Ω,
-
L_σ¹⁾=180nH,
C_σ¹⁾=40pF
Energy losses include
-
-
1.9
1.5
3.4
“tail” and diode
reverse recovery.
Anti-Parallel Diode Characteristic
Diode reverse recovery time
t_rr
T_j=150°C
-
200
t_S
V_R=800V, I_F=15A,
-
t_F
di_F/dt=650A/µs
-
Diode reverse recovery charge
Q_rr
-
2.0
Diode peak reverse recovery current I_{rr m}
-
23
Diode peak rate of fall of reverse
recovery current during t_F
di_rr/dt
-
140
1) _{Leakage inductance Lσ and stray capacity Cσ due to dynamic test circuit in figure E.}
Unit
max.
46 ns
36
780
37
2.3 mJ
2.0
4.3
ns
µC
A
A/µs
Power Semiconductors
3
Jul-02