PTFC210202FC_16 Datasheet, PDF (3/9 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET 28 W, 28 V, 1800 – 2200 MHz

PTFC210202FC
Typical Performance (data taken in a production test fixture)
Single-carrier WCDMA Drive-up
V_DD = 28 V, I_DQ = 170 mA, ƒ = 2170 MHz,
3GPP WCDMA signal, PAR = 7.5 dB,
BW = 3.84 MHz
-10
60
-20
Efficiency
50
-30
40
ACP Up
-40
30
-50
ACP Low
20
-60
28
ptfc210202fc_g2
10
32
36
40
44
Average Output Power (dBm)
Single-carrier WCDMA 3GPP Drive-up
V_DD = 28 V, I_DQ = 170 mA,
3GPP WCDMA signal,
PAR = 7.5 dB, BW = 3.84 MHz
-10
60
2110 ACPL
2140 ACPL
-20
2170 ACPL
2110 ACPU
50
2140 ACPU
2170 ACPU
-30
2110 EFF
40
2140 EFF
2170 EFF
-40
30
-50
20
-60
28
ptfc210202fc_g3
10
32
36
40
44
Average Output Power (dBm)
Single-carrier WCDMA Broadband
Performance
V_DD = 28 V, I_DQ = 170 mA, P_OUT = 36dBm,
3GPP WCDMA signal, PAR = 7.5 dB
-25
-5
Return Loss
-30
-10
-35
-15
ACP Up
-40
-20
-45
ptfc210202fc_g5
-25
1950 2000 2050 2100 2150 2200 2250 2300
Frequency (MHz)
Single-carrier WCDMA Broadband
Performance
V_DD = 28 V, I_DQ = 170 mA, P_OUT = 36dBm,
3GPP WCDMA signal, PAR = 7.5 dB
23
40
22
Gain
35
21
30
20
25
Efficiency
19
20
18
ptfc210202fc_g4
15
1950 2000 2050 2100 2150 2200 2250 2300
Frequency (MHz)
Data Sheet
3 of 9
Rev. 03.4, 2016-06-22