PTFA180701E Datasheet, PDF (3/11 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs 70 W, 1805 – 1880 MHz

PTFA180701E
PTFA180701F
Typical Performance (measurements taken in production test fixture)
Edge EVM and Modulation Spectrum
vs. Quiescent Current
V_DD = 28 V, ƒ = 1836.6 MHz, P_OUT = 44 dBm
2.6
2.4
2.2
2.0 ^EVM
1.8
1.6
1.4
1.2
1.0
0.40
-10
-20
-30
-40
400 kHz ^-50
-60
-70
600 kHz ^-80
-90
0.50
0.60
0.70
Quiescent Current (A)
Three-Carrier CDMA2000 Performance
V_DD = 28 V, I_DQ = 550 m A, ƒ = 1840 MHz
60
-40
ACP Low
50
-45
40
ACP Up
30
-50
ALT Up ^-55
20
Efficiency ^-60
10
-65
0
-70
30 32 34 36 38 40 42 44 46
Output Power, Avg. (dBm)
EDGE Modulation Spectrum Performance
V_DD = 28 V, I_DQ = 550 mA, ƒ = 1836.6 MHz
-40
50
Efficiency
-50
40
-60 400 kHz
30
-70
20
-80
600 kHz ₁₀
-90
0
30 32 34 36 38 40 42 44 46
Output Power (dBm)
Intermodulation Distortion vs. Output Power
V_DD = 28 V, I_DQ = 550 mA, ƒ = 1840 MHz,
tone spacing = 1 MHz
-25
70
-30
60
-35
3rd Order
50
-40
5th
40
-45
7th
30
-50
20
-55
-60
30
Efficiency
35
40
45
Output Power, PEP (dBm)
10
0
50
Data Sheet
3 of 11
Rev. 03.1, 2009-02-20