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| IRF40DM229 Datasheet, PDF (3/12 Pages) Infineon Technologies AG – Brushed Motor drive applications | |||
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IRF40DM229
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
gfs
Forward Transconductance
Qg
Total Gate Charge
Qgs
Gate-to-Source Charge
Qgd
Gate-to-Drain ("Miller") Charge
Qsync
Total Gate Charge Sync. (Qg - Qgd)
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Coss eff. (ER) Effective Output Capacitance (Energy Related)
Coss eff. (TR) Effective Output Capacitance (Time Related)
Diode Characteristics
Symbol
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) ï
VSD
Diode Forward Voltage
dv/dt
trr
Peak Diode Recovery ï
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IRRM
Reverse Recovery Current
Min.
87
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
Min.
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
Typ.
âââ
107
30
39
68
16
66
54
54
5317
866
575
1037
1237
Typ.
âââ
âââ
âââ
3.2
26
27
24
23
1.2
Max. Units
Conditions
âââ S VDS = 10V, ID = 97A
161
ID = 97A
âââ
âââ
nC
VDS =20V
VGS = 10V ï
âââ
âââ
VDD = 20V
âââ
âââ
ns
ID = 30A
RG = 2.7ï
âââ
VGS = 10V ï
âââ
VGS = 0V
âââ
VDS = 25V
âââ pF Æ = 1.0MHz
âââ
VGS = 0V, VDS = 0V to 32V ï
âââ
VGS = 0V, VDS = 0V to 32V ï
Max. Units
Conditions
83
636
MOSFET symbol
A
showing the
integral reverse
G
p-n junction diode.
D
S
1.2 V TJ= 25°C,IS = 97A, VGS = 0Vï
âââ V/ns TJ =150°C,IS = 97A,VDS = 40V
âââ
âââ
ns
TJ = 25° C VR = 34V
TJ = 125°C IF = 97A
âââ
âââ
nC
TJ = 25°C di/dt = 100A/µs ï
TJ = 125°C
âââ A TJ = 25°C
Notes:
ïï Repetitive rating; pulse width limited by max. junction
temperature.
ï Limited by TJmax, starting TJ = 25°C, L = 0.015mH
RG = 50ï, IAS = 97A, VGS =10V.
ï ISD ⤠97A, di/dt ⤠862A/µs, VDD ⤠V(BR)DSS, TJ ⤠150°C.
ïï Pulse width ⤠400µs; duty cycle ⤠2%.
ï
ï Coss eff. (TR) is a fixed capacitance that gives the
same charging time as Coss while VDS is rising from 0
to 80% VDSS.
ïï Coss eff. (ER) is a fixed capacitance that gives the
same energy as Coss while VDS is rising from 0 to
80% VDSS.
ïï When mounted on 1" square PCB (FR-4 or G-10
Material). For recommended footprint and soldering
techniques refer to application note # AN-994.
http://www.irf.com/technical-info/appnotes/an-994.pdf
ï Rï± is measured at TJ approximately 90°C.
ï This value determined from sample failure population,
starting TJ = 25°C, L= 0.015mH, RG = 50ï, IAS = 97A,
VGS =10V.
ïï Limited by TJmax, starting TJ = 25°C, L = 1mH
RG = 50ï, IAS = 18A, VGS =10V.
3
2016-3-2
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