IPP100N08S2-07 Datasheet, PDF (3/8 Pages) Infineon Technologies AG – OptiMOS® Power-Transistor

Parameter
Symbol
IPB100N08S2-07
IPP100N08S2-07, IPI100N08S2-07
Conditions
min.
Values
typ.
Unit
max.
Dynamic characteristics²⁾
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
C _iss
-
C _oss
V _GS=0 V, V _DS=25 V,
f =1 MHz
-
C_rss
-
t _d(on)
-
t_r
V _DD=40 V, V _GS=10 V,
-
t _d(off)
I _D=80 A, R _G=2.2 Ω
-
t_f
-
4700
1260
580
26
51
61
30
- pF
-
-
- ns
-
-
-
Gate Charge Characteristics²⁾
Gate to source charge
Q _gs
-
25
33 nC
Gate to drain charge
Gate charge total
Q _gd
V _DD=60 V, I _D=80 A,
-
69
120
Q_g
V _GS=0 to 10 V
-
144
200
Gate plateau voltage
V _plateau
-
5.4
-V
Reverse Diode
Diode continous forward current²⁾
Diode pulse current²⁾
Diode forward voltage
I_S
I _S,pulse
T _C=25 °C
V _SD
V _GS=0 V, I _F=80 A,
T _j=25 °C
-
-
80 A
-
-
400
-
0.9
1.3 V
Reverse recovery time²⁾
t _rr
V _R=40 V, I _F=I _S,
di _F/dt =100 A/µs
-
90
110 ns
Reverse recovery charge²⁾
Q _rr
V _R=40 V, I _F=I _S,
di _F/dt =100 A/µs
-
290
360 nC
1) _{Current is limited by bondwire; with an R thJC = 0.5K/W the chip is able to carry 133A at 25°C. For detailed}
information see Application Note ANPS071E at www.infineon.com/optimos
2) _{Defined by design. Not subject to production test.}
3) _{See diagram 13.}
4) _{Qualified at -20V and +20V.}
5) _{Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm}2 _{(one layer, 70 µm thick) copper area for drain}
connection. PCB is vertical in still air.
Rev. 1.0
page 3
2006-03-03