IPN65R1K5CE Datasheet, PDF (3/13 Pages) Infineon Technologies AG – 650V CoolMOSª CE Power Transistor

650VCoolMOSªCEPowerTransistor
IPN65R1K5CE
1Maximumratings
atTj=25°C,unlessotherwisespecified
Table2Maximumratings
Parameter
Symbol
Continuous drain current¹⁾
Pulsed drain current²⁾
Avalanche energy, single pulse
Avalanche energy, repetitive
Avalanche current, repetitive
MOSFET dv/dt ruggedness
ID
ID,pulse
EAS
EAR
IAR
dv/dt
Gate source voltage
VGS
Power dissipation
Operating and storage temperature
Continuous diode forward current
Diode pulse current²⁾
Reverse diode dv/dt³⁾
Maximum diode commutation speed³⁾
Ptot
Tj,Tstg
IS
IS,pulse
dv/dt
dif/dt
Min.
-
-
-
-
-
-
-
-20
-30
-
-40
-
-
-
-
Values
Typ. Max.
-
5.2
-
3.3
-
9.2
-
26
-
0.10
-
0.6
-
50
-
20
-
30
-
5.0
-
150
-
1.2
-
9.2
-
15
-
500
Unit Note/TestCondition
A
TC = 25°C
TC = 100°C
A TC = 25°C
mJ ID = 0.6A; VDD = 50V
mJ ID = 0.6A; VDD = 50V
A-
V/ns VDS=0...480V
V
static;
AC (f>1 Hz)
W TC=25°C
°C -
A TC=25°C
A TC = 25°C
V/ns VDS=0...400V,ISD<=IS,Tj=25°C
A/µs VDS=0...400V,ISD<=IS,Tj=25°C
2Thermalcharacteristics
Table3Thermalcharacteristics
Parameter
Symbol
Thermal resistance, junction - solder
point
RthJS
Thermal resistance, junction
for minimal footprint
- ambient
RthJA
Thermal resistance, junction
soldered on copper area
- ambient
RthJA
Soldering temperature, wavesoldering
only allowed at leads
Tsold
Values
Unit Note/TestCondition
Min. Typ. Max.
-
-
23.8 °C/W -
-
-
160 °C/W minimal footprint
Device on 40mm*40mm*1.5 epoxy
PCB FR4 with 6cm² (one layer 70µm
-
-
75 °C/W thick) copper area for drain
connection and cooling. PCB is
vertical without blown air.
-
-
260 °C reflow MSL3
1) _{DPAK equivalent. Limited by Tj max. Maximum duty cycle D=0.5}
2) _{Pulse width tp limited by Tj,max}
3)_{VDClink=400V;VDS,peak<V(BR)DSS;identicallowsideandhighsideswitchwithidenticalRG}
Final Data Sheet
3
Rev.2.0,2016-04-29