IPI076N15N5 Datasheet, PDF (3/10 Pages) Infineon Technologies AG – OptiMOSª5 Power-Transistor, 150 V

OptiMOS^ª5Power-Transistor,150V
IPI076N15N5
1Maximumratings
atTA=25°C,unlessotherwisespecified
Table2Maximumratings
Parameter
Symbol
Continuous drain current
Pulsed drain current¹⁾
Avalanche energy, single pulse²⁾
Gate source voltage
Power dissipation
Operating and storage temperature
ID
ID,pulse
EAS
VGS
Ptot
Tj,Tstg
Min.
-
-
-
-
-20
-
-55
Values
Typ. Max.
-
112
-
79
-
448
-
130
-
20
-
214
-
175
Unit Note/TestCondition
A
TC=25°C
TC=100°C
A TC=25°C
mJ ID=100A,RGS=25Ω
V-
W TC=25°C
°C
IEC climatic category;
DIN IEC 68-1: 55/175/56
2Thermalcharacteristics
Table3Thermalcharacteristics
Parameter
Symbol
Thermal resistance, junction - case RthJC
Thermal resistance, junction
minimal footprint
- ambient, _RthJA
Min.
-
Values
Typ. Max.
0.4 0.7
Unit Note/TestCondition
K/W -
-
-
62 K/W -
3Electricalcharacteristics
Table4Staticcharacteristics
Parameter
Symbol
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance³⁾
Transconductance
V(BR)DSS
VGS(th)
IDSS
IGSS
RDS(on)
RG
gfs
Min.
150
3.0
-
-
-
-
-
-
45
Values
Typ. Max.
-
-
3.8 4.6
0.1 1
10 100
1
100
5.9 7.6
6.4 8.4
1.1 1.7
90 -
Unit Note/TestCondition
V VGS=0V,ID=1mA
V
VDS=VGS,ID=160µA
µA
VDS=120V,VGS=0V,Tj=25°C
VDS=120V,VGS=0V,Tj=125°C
nA VGS=20V,VDS=0V
mΩ
VGS=10V,ID=56A
VGS=8V,ID=28A
Ω-
S
|VDS|>2|ID|RDS(on)max,ID=56A
1) _{See Diagram 3}
2) _{See Diagram 13}
3) _{Defined by design. Not subject to production test.}
Final Data Sheet
3
Rev.2.0,2016-03-03