IPI05N03LA Datasheet, PDF (3/10 Pages) Infineon Technologies AG – OptiMOS 2 Power-Transistor

Parameter
Symbol Conditions
IPB05N03LA
IPI05N03LA, IPP05N03LA
min.
Values
typ.
Unit
max.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
C _iss
-
C _oss
V _GS=0 V, V _DS=15 V,
f =1 MHz
-
C_rss
-
t _d(on)
-
t_r
V _DD=15 V, V _GS=10 V,
-
t _d(off)
I _D=20 A, R _G=2.7 Ω
-
t_f
-
2413
921
112
11
27
32
4.6
3110 pF
1225
167
17 ns
38
45
6.9
Gate Charge Characteristics⁶⁾
Gate to source charge
Gate charge at threshold
Gate to drain charge
Switching charge
Gate charge total
Gate plateau voltage
Gate charge total, sync. FET
Output charge
Q _gs
-
8.1
11 nC
Q _g(th)
-
3.9
5.0
Q _gd
V _DD=15 V, I _D=40 A,
-
5.3
8.0
Q _sw
V _GS=0 to 5 V
-
10
14
Q_g
-
19
25
V _plateau
-
3.4
-V
Q _g(sync)
V _DS=0.1 V,
V _GS=0 to 5 V
-
17
22 nC
Q _oss
V _DD=15 V, V _GS=0 V
-
20
27
Reverse Diode
Diode continous forward current
Diode pulse current
Diode forward voltage
Reverse recovery charge
I_S
I _S,pulse
V _SD
T _C=25 °C
V _GS=0 V, I _F=80 A,
T _j=25 °C
Q _rr
V _R=15 V, I _F=I _S,
di _F/dt =400 A/µs
-
-
80 A
-
-
385
-
0.97
1.2 V
-
-
10 nC
6) _{See figure 16 for gate charge parameter definition}
Rev. 1.4
page 3
2004-03-23