IPD90N03S4L-03_10 Datasheet, PDF (3/9 Pages) Infineon Technologies AG – OptiMOS-T2 Power-Transistor

IPD90N03S4L-03
Parameter
Dynamic characteristics²⁾
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics²⁾
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Reverse Diode
Diode continous forward current²⁾
Diode pulse current²⁾
Diode forward voltage
Reverse recovery time²⁾
Symbol
Conditions
min.
Values
typ.
Unit
max.
C _iss
-
C _oss
V _GS=0 V, V _DS=25 V,
f =1 MHz
-
C_rss
-
t _d(on)
-
t_r
V _DD=15 V, V _GS=10 V,
-
t _d(off)
I _D=90 A, R _G=3.5 Ω
-
t_f
-
4000
1000
53
9
6
37
7
5100 pF
1300
100
- ns
-
-
-
Q _gs
-
12
15 nC
Q _gd
V _DD=24 V, I _D=90 A,
-
Q_g
V _GS=0 to 10 V
-
8
16
60
75
V _plateau
-
3.1
-V
I_S
I _S,pulse
T _C=25 °C
V _SD
V _GS=0 V, I _F=90 A,
T _j=25 °C
t _rr
V _R=15 V, I _F=I _S,
di _F/dt =100 A/µs
-
-
90 A
-
-
360
0.6
0.9
1.3 V
-
60
- ns
Reverse recovery charge²⁾
Q _rr
-
50
- nC
1) _{Current is limited by bondwire; with an R thJC = 1.6K/W the chip is able to carry 129A at 25°C.}
2) _{Defined by design. Not subject to production test.}
3) _{Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm}2 _{(one layer, 70 µm thick) copper area for drain}
connection. PCB is vertical in still air.
Rev. 2.1
page 3
2010-03-08