IPB80N04S4L-04 Datasheet, PDF (3/9 Pages) Infineon Technologies AG – OptiMOS-T2 Power-Transistor

Parameter
Dynamic characteristics²⁾
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics²⁾
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Reverse Diode
Diode continous forward current²⁾
Diode pulse current²⁾
Diode forward voltage
Reverse recovery time²⁾
Symbol
IPB80N04S4L-04
IPI80N04S4L-04, IPP80N04S4L-04
Conditions
min.
Values
typ.
Unit
max.
C _iss
C _oss
C_rss
V _GS=0V, V _DS=25V,
f =1MHz
-
3610 4690 pF
-
650
840
-
30
69
t _d(on)
-
7
- ns
t_r
V _DD=20V, V _GS=10V,
-
12
-
t _d(off)
I _D=80A, R _G=3.5Ω
-
22
-
t_f
-
31
-
Q _gs
Q _gd
V _DD=32V, I _D=80A,
Q_g
V _GS=0 to 10V
V _plateau
-
12
16 nC
-
5
12
-
46
60
-
3.2
-V
I_S
I _S,pulse
T _C=25°C
V _SD
V _GS=0V, I _F=80A,
T _j=25°C
t _rr
V _R=20V, I _F=50A,
di _F/dt =100A/µs
-
-
80 A
-
-
320
-
0.9
1.3 V
-
39
- ns
Reverse recovery charge²⁾
Q _rr
-
35
- nC
1) _{Current is limited by bondwire; with an R thJC = 2.1K/W the chip is able to carry 98A at 25°C.}
2) _{Defined by design. Not subject to production test.}
3) _{Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm}2 _{(one layer, 70 µm thick) copper area for drain}
connection. PCB is vertical in still air.
Rev. 1.0
page 3
2010-04-13