IPB35N10S3L-26_12 Datasheet, PDF (3/9 Pages) Infineon Technologies AG – OptiMOS™-T Power-Transistor

IPB35N10S3L-26
Parameter
Dynamic characteristics¹⁾
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics¹⁾
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Reverse Diode
Diode continous forward current¹⁾
Diode pulse current¹⁾
Diode forward voltage
Reverse recovery time¹⁾
Symbol
Conditions
C _iss
C _oss
C_rss
t _d(on)
t_r
t _d(off)
t_f
V _GS=0V, V _DS=25V,
f =1MHz
V _DD=20V, V _GS=10V,
I _D=35A, R _G=3.5W
Q _gs
Q _gd
V _DD=80V, I _D=35A,
Q_g
V _GS=0 to 10V
V _plateau
I_S
I _S,pulse
T _C=25°C
V _SD
V _GS=0V, I _F=35A,
T _j=25°C
t _rr
V _R=50V, I _F=I _S,
di _F/dt =100A/µs
min.
Values
typ.
Unit
max.
-
2070 2700 pF
-
460
600
-
50
75
-
6
- ns
-
4
-
-
18
-
-
3
-
-
8
10 nC
-
5
8
-
30
39
-
3.7
-V
-
-
35 A
-
-
140
0.6
1
1.2 V
-
79
- ns
Reverse recovery charge¹⁾
Q _rr
-
150
- nC
1) _{Defined by design. Not subject to production test.}
2) _{Qualified with VGS = +20/-5V.}
3) _{Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain}
connection. PCB is vertical in still air.
Rev. 1.1
page 3
2011-05-17