IPB200N25N3G Datasheet, PDF (3/11 Pages) Infineon Technologies AG – OptiMOSTM3 Power-Transistor

Parameter
Symbol Conditions
IPB200N25N3 G IPP200N25N3 G
IPI200N25N3 G
min.
Values
typ.
Unit
max.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
C _iss
-
C _oss
V _GS=0 V, V _DS=100 V,
f =1 MHz
-
C _rss
-
t _d(on)
-
t_r
V _DD=100 V,
-
V _GS=10 V, I _D=25 A,
t _d(off)
R _G=1.6 Ω
-
t_f
-
5340
297
4
18
20
45
12
7100 pF
395
-
- ns
-
-
-
Gate Charge Characteristics⁴⁾
Gate to source charge
Gate to drain charge
Switching charge
Gate charge total
Gate plateau voltage
Output charge
Q _gs
-
Q _gd
-
Q _sw
V _DD=100 V, I _D=25 A,
V _GS=0 to 10 V
-
Q_g
-
V _plateau
-
Q _oss
V _DD=100 V, V _GS=0 V
-
22
- nC
7
-
13
-
64
86
4.2
-V
135
179 nC
Reverse Diode
Diode continous forward current
Diode pulse current
Diode forward voltage
Reverse recovery time
Reverse recovery charge
I_S
I _S,pulse
T _C=25 °C
V _SD
V _GS=0 V, I _F=64 A,
T _j=25 °C
t _rr
V _R=100 V, I _F=25 A,
Q _rr
di _F/dt =100 A/µs
-
-
64 A
-
-
256
-
1
1.2 V
-
170
- ns
-
780
- nC
4) _{See figure 16 for gate charge parameter definition}
Rev. 2.2
page 3
2009-10-23