IPB136N08N3G_15 Datasheet, PDF (3/11 Pages) Infineon Technologies AG – Power Transistor

Parameter
Symbol Conditions
IPP139N08N3 G IPI139N08N3 G
IPB136N08N3 G
min.
Values
typ.
Unit
max.
Dynamic characteristics
#>@ED3 1@13 9D1>3 5
( ED@ED3 1@13 9D1>3 5
+ 5F5BC5 DB1>C65B3 1@13 9D1>3 5
-EB> ? > 45<1I D9=5
+ 9C5 D9=5
-EB> ? 6645<1I D9=5
1<<D9=5
C _{U__}
%
C _{[__}
V _=H  .  V _9H   . 
f & " J
%
C _{^__}
%
t _P"[Z#
%
t_^
V ₉₉   .  V _=H  . 
%
t _P"[RR#
I ₉     R ₌  "
%
t_R
%
)+((
+-+
)-
)*
+-
)0
-
)/+( \<
,.1
%
% Z_
%
%
%
!1D5  81BS5  81B13 D5B9CD93 C^-#
!1D5 D? C? EB3 5 3 81B75
!1D5 D? 4B19> 3 81B75
, G9D3 89>7 3 81B75
!1D5 3 81B75 D? D1<
!1D5 @<1D51E F? <D175
( ED@ED3 81B75
Q _{S_}
%
/
% Z8
Q _SP
%
,
%
Q _{_c}
V ₉₉   .  I ₉    
V _=H  D?  .
%
0
%
Q_S
%
)1
*-
V _\XM`QMa
%
-&-
%J
Q _{[__}
V ₉₉   .  V _=H  .
%
*-
+, Z8
Reverse Diode
 9? 45 3 ? >D9>? EC6? BG1B4 3 EBB5>D
 9? 45 @E<C5 3 EBB5>D
 9? 45 6? BG1B4 F? <D175
+ 5F5BC5 B53 ? F5BI D9=5
+ 5F5BC5 B53 ? F5BI 3 81B75
I_H
I _{H$\aX_Q}
V _H9
t _^^
Q _^^
T ₈   T
V _=H  .  I _<    
T _V   T
V _G   .  I _<4I _H
Pi _<'Pt     V C
%
%
,- 6
%
%
)0(
%
)&(
)&* J
%
-(
% Z_
%
/,
% Z8
-# _{, 55 697EB5  6? B71D5 3 81B75 @1B1=5D5B4569>9D9? >}
+ 5F  
@175