GMRS6 Datasheet, PDF (3/3 Pages) Infineon Technologies AG – Giant Magneto Resistive Position Sensor

GMR S6
Maximum Ratings
Parameter
Symbol
Operating temperature
Storage temperature
Supply current
Thermal conductivity
Magnetic field ¹⁾
T_A
T_stg
I₁
G_thC A
G_thC C
H_rot
1) _{larger fields may reduce the magnetoresistive effect irreversibly}
Value
– 40 … + 150
– 50 … + 150
5
> 2.2
>5
< 15
Unit
°C
°C
mA
mW/K
mW/K
kA/m
Characteristics (T_A = 25 °C)
Parameter
Nominal supply current
Basic resistance
Magnetoresistive effect
H_rot = 5 ... 15 kA/m
Temperature coefficient of
basic resistance
Temperature coefficient of
magnetoresistance
Temperature coefficient of
magnetoresistive effect
Hysteresis at H_rot = 10 kA/m
Symbol
I_1N
R₀
∆R/R₀
TC_R0
TC_∆R
TC_∆R/R0
Hys
Value
4
> 700
≈4
+ 0.09 … + 0.12
– 0.12 … – 0.09
– 0.27 … – 0.23
<2
Unit
mA
Ω
%
%/K
%/K
%/K
degrees
Application Hints
The application mode of the GMR position sensor is preferably as a bridge or halfbridge
circuit. In every case this type of circuit compensates for the T_C of the resistance value
R₀. To compensate for the T_C of the GMR effect ∆R/R₀, if there is the necessity, is left to
the application circuit and can be done for example with a NIC circuit. When operated
over a complete 360° turn, a total signal of ≈ 20 mV/V is achieved at 25 °C with a
halfbridge. The output signal is doubled when a fullbridge circuit is used. In the case of
linear position sensing, the electrical circuit remains unchanged.
Data Sheet
3
1999-04-01