CMY213 Datasheet, PDF (3/9 Pages) Infineon Technologies AG – GaAs MMIC

GaAs Components
CMY 213
Typical Performance at Cellular Frequencies*
T_A = 25 °C; V_DD = 3 V, f_RF = 850 MHz; f_LO = 740 MHz; P_LO = – 5 dBm;
f_IF = 110 MHz; Z_S = Z_L = 50 Ω; unless otherwise specified
Parameter
Symbol
Limit Values
min. typ. max.
Total operating Current
(Mixer + IF amplifier)
I_OP
–
8.0 9.5
Conversion Gain
SSB Noise Figure
RF Input -/ IF Output return loss
(external matching required)
G_C
8.0
F_SSB
–
RFIrl/IFOrl –
9.5 –
8
–
10 –
3^rd Order Input Intercept Point
IIP3
8
10 –
LO-RF Isolation
Iso
–
10 –
Unit
mA
dB
dB
dB
dBm
dB
*Important Note:
During production, the RF performance at PCS frequencies is screened. The passed
devices also achieve the specified RF performance at cellular frequencies.
Test Conditions at PCS Frequencies
T_A = 25 °C; V_DD = 3 V, f_RF = 1960 MHz; f_LO = 1750 MHz; P_LO = – 5 dBm;
f_IF = 210 MHz; Z_S = Z_L = 50 Ω; unless otherwise specified
Parameter
Symbol
Limit Values
min. typ. max.
Total operating Current
(Mixer + IF amplifier)
I_OP
–
8.0 9.5
Conversion Gain
SSB Noise Figure
RF Input -/ IF Output return loss
(external matching required)
G_C
7
F_SSB
–
RFIrl/IFOrl –
8.5 –
8.5 –
10 –
3^rd Order Input Intercept Point
IIP3
10 12 –
LO-RF Isolation
Iso
–
6
–
Unit
mA
dB
dB
dB
dBm
dB
Data Sheet
3
2001-01-01