CFY27 Datasheet, PDF (3/8 Pages) Infineon Technologies AG – HiRel Ku-Band GaAs General Purpose MESFET

Electrical Characteristics (at T_A=25°C; unless otherwise specified)
CFY27
Parameter
DC Characteristics
Drain-source saturation current
V_DS = 2 V, V_GS = 0 V
Gate threshold voltage
V_DS = 3 V, I_D = 1 mA
Drain current at pinch-off
V_DS = 3 V, V_GS = - 4 V
Gate leakage current at pinch-off
V_DS = 3 V, V_GS = - 4 V
Transconductance
V_DS = 3 V, I_D = 120 mA
Gate leakage current at operation
V_DS = 3 V, I_D = 120 mA
Thermal resistance
junction to soldering point
Symbol
min.
Values
Unit
typ. max.
I_Dss
-V_Gth
I_Dp
150 270 420 mA
1.0 2.0
3.2 V
-
< 12 60
µA
-I_Gp
-
< 12 30
µA
g_m120
130 160 -
mS
-I_G120
-
<3
-
µA
R_{th JS}
-
125 -
K/W
Semiconductor Group
3 of 9
Draft D, September 99