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BUZ61A Datasheet, PDF (3/9 Pages) Siemens Semiconductor Group – SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)
BUZ 61 A
Electrical Characteristics, at Tj = 25°C, unless otherwise specified
Parameter
Symbol
min.
Dynamic Characteristics
Transconductance
VDS≥ 2 * ID * RDS(on)max, ID = 8 A
Input capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHz
Output capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHz
Reverse transfer capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHz
Turn-on delay time
VDD = 30 V, VGS = 10 V, ID = 3 A
RGS = 50 Ω
Rise time
VDD = 30 V, VGS = 10 V, ID = 3 A
RGS = 50 Ω
Turn-off delay time
VDD = 30 V, VGS = 10 V, ID = 3 A
RGS = 50 Ω
Fall time
VDD = 30 V, VGS = 10 V, ID = 3 A
RGS = 50 Ω
gfs
5
Ciss
-
Coss
-
Crss
-
td(on)
-
tr
-
td(off)
-
tf
-
Values
Unit
typ.
max.
S
11.5
-
pF
1500
2250
210
315
75
110
ns
20
30
65
100
260
340
75
100
Semiconductor Group
3
07/96