BTS436L2 Datasheet, PDF (3/12 Pages) Infineon Technologies AG – Smart High-Side Power Switch One Channel: 38mΩ Status Feedback

Maximum Ratings at Tj = 25 °C unless otherwise specified
Parameter
Supply voltage (overvoltage protection see page 4)
Supply voltage for full short circuit protection
T_{j Start}=-40 ...+150°C
Load dump
R_I²⁾= 2 Ω,
protection¹⁾ V_LoadDump =
R_L= 4.0 Ω, t_d= 200 ms,
V_A + V_s, V_A = 13.5
IN= low or high
V
Load current (Current limit, see page 5)
Operating temperature range
Storage temperature range
Power dissipation (DC), T_C ≤ 25 °C
Maximal switchable inductance, single pulse
Vbb = 12V, T_j,start = 150°C, T_C = 150°C
(See diagram on page 8) I_L(ISO) = 9.8
const.
A, RL
=
0
Ω,
E⁴⁾_AS=0.33J:
Electrostatic discharge capability (ESD)
IN:
(Human Body Model)
ST:
out to all other pins shorted:
acc. MIL-STD883D, method 3015.7 and
ESD assn. std. S5.1-1993; R=1.5kΩ; C=100pF
Input voltage (DC)
Current through input pin (DC)
Current through status pin (DC)
see internal circuit diagrams page 7
Symbol
V_bb
V_bb
V_Load
3
dump
I_L
T_j
T_stg
P_tot
Z_L
V_ESD
V_IN
I_IN
I_ST
BTS436L2
Values Unit
43 V
24 V
60 V
self-limited A
-40 ...+150 °C
-55 ...+150
75 W
5.0 mH
1.0 kV
4.0
8.0
-10 ... +16 V
±2.0 mA
±5.0
Thermal Characteristics
Parameter and Conditions
Symbol
Thermal resistance
chip - case: R_thJC
junction - ambient (free air): ^RthJA
device on pcb^5):
Values
min typ max
--
-- 1.75
--
-- 75
-- 33
--
Unit
K/W
1_{) Supply voltages higher than Vbb(AZ) require an external current limit for the GND and status pins (a 150Ω}
resistor for the GND connection is recommended).
2₎
3₎
R_I = internal resistance of the load dump test pulse generator
V_{Load dump} is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839
4_{) EAS is the maximum inductive switch-off energy}
5_{) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for Vbb}
connection. PCB is vertical without blown air.
Semiconductor Group
Page 3
2003-Oct-01