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BTS247Z Datasheet, PDF (3/12 Pages) Infineon Technologies AG – Speed TEMPFET(N-Channel Enhancement mode Logic Level Input Potential-free temperature sensor with thyristor characteristics)
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Thermal Characteristics
Parameter
Characteristics
junction - case:
Thermal resistance @ min. footprint
Thermal resistance @ 6 cm2 cooling area 1)
Electrical Characteristics
Parameter
at Tj = 25°C, unless otherwise specified
Static Characteristics
Drain-source breakdown voltage
VGS = 0 V, ID = 0.25 mA
Gate threshold voltage, VGS = VDS
ID = 90 µA
ID = 250 µA
Zero gate voltage drain current
VDS = 50 V, VGS = 0 V, Tj = -40 °C
VDS = 50 V, VGS = 0 V, Tj = 25 °C
VDS = 50 V, VGS = 0 V, Tj = 150 °C
Gate-source leakage current
VGS = 20 V, VDS = 0 V, Tj = 25 °C
VGS = 20 V, VDS = 0 V, Tj = 150 °C
Drain-Source on-state resistance
VGS = 4.5 V, ID = 12 A
VGS = 10 V, ID = 12 A
BTS 247 Z
Symbol
Values
Unit
min. typ. max.
RthJC
Rth(JA)
Rth(JA)
-
- 1.25 K/W
-
-
62
-
33 40
Symbol
Values
Unit
min. typ. max.
V(BR)DSS 55
-
-V
VGS(th)
1.2 1.6
2
-
1.65 -
IDSS
µA
-
-
0.1
-
0.1
1
-
-
100
IGSS
nA
-
10 100
-
20 100
RDS(on)
m
-
22
28
-
15
18
1 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for drain
connection. PCB mounted vertical without blown air.
3
2000-05-17
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