BTS140A Datasheet, PDF (3/10 Pages) Siemens Semiconductor Group – TEMPFET (N channel Enhancement mode Temperature sensor with thyristor characteristic)

TEMPFET^® BTS 140 A
Electrical Characteristics (cont’d)
at T_j = 25 °C, unless otherwise specified.
Parameter
Symbol
min.
Reverse Diode
Continuous source current
I_S
Pulsed source current
I _SM
Diode forward on-voltage
V_SD
I _F = 84 A, V_GS = 0
Reverse recovery time
t _rr
I _F = I _S, di_F/dt = 100 A/µs, V_R = 30 V
Reverse recovery charge
Q _rr
I _F = I_S, di_F/dt = 100 A/µs, V_R = 30 V
Temperature Sensor
Forward voltage
I _TS(on) = 10 mA, T_j = – 55 ... + 150 °C
Sensor override, t_p ≤ 100 µs
T_j = – 55 ... + 160 °C
Forward current
T_j = – 55 ... + 150 °C
Sensor override, t_p ≤ 100 µs
T_j = – 55 ... + 160 °C
Holding current, V_TS(off) = 5 V, T_j = 25 °C
T_j = 150 °C
Switching temperature
V_TS = 5 V
Turn-off time
V_TS = 5 V, I_TS(on) = 2 mA
V_TS(on)
I_TS(on)
I_H
T_TS(on)
t_off
–
–
–
–
–
–
–
–
–
0.05
0.05
150
0.5
Values
Unit
typ.
max.
–
42
A
–
168
V
1.8
2.2
ns
80
–
µC
0.14
–
V
1.4
1.50
–
10
mA
–
5
–
600
0.1
0.5
0.2
0.3
°C
–
–
µs
–
2.5
3
04.97