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BTS118D_06 Datasheet, PDF (3/11 Pages) Infineon Technologies AG – Smart Low Side Power Switch
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Smart Low Side Power Switch
Power HITFET BTS 118D
Electrical Characteristics
Parameter
Symbol
Values
Unit
at Tj = 25°C, unless otherwise specified
Characteristics
min. typ. max.
Drain source clamp voltage
Tj = - 40 ...+ 150, ID = 10 mA
Off-state drain current
Tj = -40...+85 °C, VDS = 32 V , VIN = 0 V
Tj = 150 °C
Input threshold voltage
ID = 0.6 mA, Tj = 25 °C
ID = 0.6 mA, Tj = 150 °C
On state input current
On-state resistance
VIN = 5 V, ID = 2.2 A, Tj = 25 °C
VIN = 5 V, ID = 2.2 A, Tj = 150 °C
VDS(AZ)
42
-
55 V
IDSS
µA
-
1.5
8
-
4
12
VIN(th)
V
1.3 1.7 2.2
0.8
-
-
IIN(on)
-
10
30 µA
RDS(on)
mW
-
90 120
-
160 240
On-state resistance
RDS(on)
VIN = 10 V, ID = 2.2 A, Tj = 25 °C
-
70 100
VIN = 10 V, ID = 2.2 A, Tj = 150 °C
-
130 200
Nominal load current 5)
ID(Nom)
2.4
3.2
-A
Tj < 150°C, VIN = 10 V, TA = 85 °C, SMD 1)
Nominal load current 5)
ID(ISO)
3.5
5
-
VIN = 10 V, VDS = 0.5 V, TC = 85 °C, Tj < 150°C
Current limit (active if VDS>2.5 V)2)
ID(lim)
10
15
20
VIN = 10 V, VDS = 12 V, tm = 200 µs
1@ 6 cm2 cooling area
2Device switched on into existing short circuit (see diagram Determination of ID(lim)). If the device is in on condit
and a short circuit occurs, these values might be exceeded for max. 50 µs.
5not subject to production test, calculated by RthJA and Rds(on)
Datasheet
3
Rev. 1.3, 2006-12-22
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