BSZ165N04NSG Datasheet, PDF (3/9 Pages) Infineon Technologies AG – OptiMOS™3 Power-Transistor

Parameter
Symbol Conditions
BSZ165N04NS G
min.
Values
typ.
Unit
max.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
C _iss
-
C _oss
V _GS=0 V, V _DS=20 V,
f =1 MHz
-
C_rss
-
t _d(on)
-
t_r
V _DD=20 V, V _GS=10 V,
-
t _d(off)
I _D=20 A, R _G=1.6 Ω
-
t_f
-
Gate Charge Characteristics⁵⁾
Gate to source charge
Gate charge at threshold
Gate to drain charge
Switching charge
Gate charge total
Gate plateau voltage
Gate charge total, sync. FET
Output charge
Q _gs
-
Q _g(th)
-
Q _gd
V _DD=20 V, I _D=20 A,
-
Q _sw
V _GS=0 to 10 V
-
Q_g
-
V _plateau
-
Q _g(sync)
V _DS=0.1 V,
V _GS=0 to 10 V
-
Q _oss
V _DD=20 V, V _GS=0 V
-
Reverse Diode
Diode continuous forward current I _S
-
T _C=25 °C
Diode pulse current
I _S,pulse
-
Diode forward voltage
V _SD
V _GS=0 V, I _F=20 A,
T _j=25 °C
-
Reverse recovery charge
Q _rr
V _R=20 V, I _F=I _S,
di _F/dt =400 A/µs
-
5) _{See figure 16 for gate charge parameter definition}
630
840 pF
220
290
6.7
-
5.4
- ns
1.0
-
6.8
-
2.2
-
3.7
- nC
1.9
-
1.0
-
2.9
-
7.8
10
5.9
-V
7.4
- nC
8.0
-
-
21 A
-
124
0.92
1.2 V
10
- nC
Rev. 2.0
page 3
2010-03-24