BSD316SN Datasheet, PDF (3/9 Pages) Infineon Technologies AG – OptiMOS™2 Small-Signal-Transistor

Parameter
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Reverse Diode
Diode continous forward current
Diode pulse current
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Symbol Conditions
BSD316SN
min.
Values
typ.
Unit
max.
C _iss
-
C _oss
V _GS=0 V, V _DS=15 V,
f =1 MHz
-
C_rss
-
t _d(on)
-
t_r
V _DD=15 V, V _GS=10 V,
-
t _d(off)
I _D=1.4 A, R _G=6 Ω
-
t_f
-
71
94 pF
26
35
5
7
3.4
- ns
2.3
-
5.8
-
1.0
-
Q _gs
-
0.3
- nC
Q _gd
V _DD=15 V, I _D=1.4 A,
-
0.2
-
Q_g
V _GS=0 to 5 V
-
0.6
-
V _plateau
-
3.4
-V
I_S
I _S,pulse
T _A=25 °C
V _SD
V _GS=0 V, I _F=1.4 A,
T _j=25 °C
t _rr
V _R=15 V, I _F=1.4 A,
Q _rr
di _F/dt =100 A/µs
-
-
0.5 A
-
-
5.6
-
0.8
1.1 V
-
9.1
- ns
-
2.6
- nC
Rev 2.1
page 3
2009-02-11