BSC097N06NS Datasheet, PDF (3/10 Pages) Infineon Technologies AG – OptiMOSTM Power-Transistor

Parameter
Symbol Conditions
BSC097N06NS
min.
Values
typ.
Unit
max.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
C _iss
-
C _oss
V _GS=0 V, V _DS=30 V,
f =1 MHz
-
C_rss
-
t _d(on)
-
t_r
V _DD=30 V, V _GS=10 V,
-
I _D=40 A,
t _d(off)
R _G,ext,ext=1.6 W
-
t_f
-
Gate Charge Characteristics⁵⁾
Gate to source charge
Gate charge at threshold
Gate to drain charge
Switching charge
Gate charge total
Gate plateau voltage
Gate charge total, sync. FET
Output charge
Q _gs
-
Q _g(th)
-
Q _gd
V _DD=30 V, I _D=40 A,
-
Q _sw
V _GS=0 to 10 V
-
Q_g
-
V _plateau
-
Q _g(sync)
V _DS=0.1 V,
V _GS=0 to 10 V
-
Q _oss
V _DD=30 V, V _GS=0 V
-
Reverse Diode
Diode continuous forward current I _S
-
T _C=25 °C
Diode pulse current
I _S,pulse
-
Diode forward voltage
V _SD
V _GS=0 V, I _F=30 A,
T _j=25 °C
-
Reverse recovery time
Reverse recovery charge
t _rr
V _R=30 V, I _F=30 A,
-
Q _rr
di _F/dt =100 A/µs
-
860 1075 pF
210
263
16
32
6
- ns
2
-
10
-
2
-
4.5
- nC
2.4
-
2.6
3.7
4.7
-
12
15
5.2
-V
10
- nC
14
-
-
30 A
-
184
1.0
1.2 V
33
53 ns
30
- nC
5) _{See figure 16 for gate charge parameter definition}
Rev.2.0
page 3
2013-10-17