BSC093N15NS5 Datasheet, PDF (3/10 Pages) Infineon Technologies AG – OptiMOSTM 5 Power-Transistor, 150 V

OptiMOS^TM5Power-Transistor,150V
BSC093N15NS5
1Maximumratings
atTA=25°C,unlessotherwisespecified
Table2Maximumratings
Parameter
Symbol
Continuous drain current
Pulsed drain current¹⁾
Avalanche energy, single pulse²⁾
Gate source voltage
Power dissipation
Operating and storage temperature
ID
ID,pulse
EAS
VGS
Ptot
Tj,Tstg
Min.
-
-
-
-
-20
-
-55
Values
Typ. Max.
-
87
-
55
-
348
-
130
-
20
-
139
-
150
Unit Note/TestCondition
A
TC=25°C
TC=100°C
A TC=25°C
mJ ID=50A,RGS=25Ω
V-
W TC=25°C
°C
IEC climatic category;
DIN IEC 68-1: 55/150/56
2Thermalcharacteristics
Table3Thermalcharacteristics
Parameter
Symbol
Thermal resistance, junction - case RthJC
Thermal resistance, junction - ambient,
6 cm² cooling area³⁾
RthJA
Min.
-
Values
Typ. Max.
0.54 0.9
Unit Note/TestCondition
K/W -
-
-
50 K/W -
3Electricalcharacteristics
Table4Staticcharacteristics
Parameter
Symbol
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance⁴⁾
Transconductance
V(BR)DSS
VGS(th)
IDSS
IGSS
RDS(on)
RG
gfs
Min.
150
3.0
-
-
-
-
-
-
34
Values
Typ. Max.
-
-
3.8 4.6
0.1 1
10 100
1
100
7.9 9.3
8.7 10.5
0.9 1.4
67 -
Unit Note/TestCondition
V VGS=0V,ID=1mA
V
VDS=VGS,ID=107µA
µA
VDS=120V,VGS=0V,Tj=25°C
VDS=120V,VGS=0V,Tj=125°C
nA VGS=20V,VDS=0V
mΩ
VGS=10V,ID=44A
VGS=8V,ID=22A
Ω-
S
|VDS|>2|ID|RDS(on)max,ID=44A
1) _{See Diagram 3 for more detailed information}
2) _{See Diagram 13 for more detailed information}
3) _{Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm}2 _{(one layer, 70 µm thick) copper area for drain connection.}
PCB is vertical in still air.
4) _{Defined by design. Not subject to production test}
Final Data Sheet
3
Rev.2.2,2016-06-10