BSC067N06LS3G Datasheet, PDF (3/9 Pages) Infineon Technologies AG – OptiMOS3 Power-Transistor

Parameter
Symbol Conditions
BSC067N06LS3 G
min.
Values
typ.
Unit
max.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
C _iss
-
C _oss
V _GS=0 V, V _DS=30 V,
f =1 MHz
-
C_rss
-
t _d(on)
-
t_r
V _DD=30 V, V _GS=10 V,
-
t _d(off)
I _D=20 A, R _G=2 Ω
-
t_f
-
Gate Charge Characteristics⁵⁾
Gate to source charge
Gate charge at threshold
Gate to drain charge
Switching charge
Gate charge total
Gate plateau voltage
Gate charge total
Output charge
Q _gs
-
Q _g(th)
-
Q _gd
V _DD=30 V, I _D=50 A,
-
Q _sw
V _GS=0 to 4.5 V
-
Q_g
-
V _plateau
-
Q_g
V _DD=30 V, I _D=50 A,
V _GS=0 to 10 V
-
Q _oss
V _DD=30 V, V _GS=0 V
-
Reverse Diode
Diode continuous forward current I _S
-
T _C=25 °C
Diode pulse current
I _S,pulse
-
Diode forward voltage
V _SD
V _GS=0 V, I _F=50 A,
T _j=25 °C
-
Reverse recovery time
Reverse recovery charge
t _rr
V _R=30 V, I _F=20A,
-
Q _rr
di _F/dt =100 A/µs
-
5) _{See figure 16 for gate charge parameter definition}
3800
710
32
15
26
37
7
5100 pF
940
-
- ns
-
-
-
14
- nC
7
-
5
-
12
-
23
30
3.6
-V
51
67 nC
35
47
-
50 A
-
200
0.9
1.2 V
40
- ns
39
- nC
Rev. 2.2
page 3
2010-08-31