BSC042N03MSG Datasheet, PDF (3/10 Pages) Infineon Technologies AG – OptiMOS™3 Power-MOSFET

Parameter
Symbol Conditions
BSC042N03MS G
min.
Values
typ.
Unit
max.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
C _iss
-
C _oss
V _GS=0 V, V _DS=15 V,
f =1 MHz
-
C_rss
-
t _d(on)
-
t_r
V _DD=15 V, V _GS=4.5 V,
-
t _d(off)
I _D=30 A, R _G=1.6 Ω
-
t_f
-
Gate Charge Characteristics⁵⁾
Gate to source charge
Gate charge at threshold
Gate to drain charge
Switching charge
Gate charge total
Gate plateau voltage
Gate charge total
Gate charge total, sync. FET
Output charge
Q _gs
-
Q _g(th)
-
Q _gd
V _DD=15 V, I _D=30 A,
-
Q _sw
V _GS=0 to 4.5 V
-
Q_g
-
V _plateau
-
Q_g
V _DD=15 V, I _D=30 A,
V _GS=0 to 10 V
-
Q _g(sync)
V _DS=0.1 V,
V _GS=0 to 4.5 V
-
Q _oss
V _DD=15 V, V _GS=0 V
-
Reverse Diode
Diode continuous forward current I _S
-
T _C=25 °C
Diode pulse current
I _S,pulse
-
Diode forward voltage
V _SD
V _GS=0 V, I _F=30 A,
T _j=25 °C
-
Reverse recovery charge
Q _rr
V _R=15 V, I _F=I _S,
di _F/dt =400 A/µs
-
4) _{See figure 13 for more detailed information}
5) _{See figure 16 for gate charge parameter definition}
Rev. 1.17
page 3
3200
940
66
16
8.0
19
8.0
4300 pF
1300
-
- ns
-
-
-
9.2
12 nC
5.1
6.8
4.5
7.5
8.6
13
20
27
2.9
-V
41
55
17
23 nC
25
33
-
52 A
-
372
0.84
1.1 V
-
15 nC
2009-10-22