BSC032NE2LS Datasheet, PDF (3/12 Pages) Infineon Technologies AG – n-Channel Power MOSFET

OptiMOS™ Power-MOSFET
BSC032NE2LS
2
Maximum ratings
at T_j = 25 °C, unless otherwise specified.
Table 2 Maximum ratings
Parameter
Symbol
Values
Unit Note / Test Condition
Min. Typ. Max.
Continuous drain current
I_D
-
-
84
A
V_GS=10 V, T_C=25 °C
-
-
53
V_GS=10 V, T_C=100 °C
-
-
68
V_GS=4.5 V, T_C=25 °C
-
-
43
V_GS=4.5 V, T_C=100 °C
-
-
22
V_GS=10 V, T_A=25 °C,
R_thJA=50 K/W¹⁾)
Pulsed drain current²⁾
I_D,pulse
-
-
336
T_C=25 °C
Avalanche current, single pulse³⁾ I_AS
-
-
45
Avalanche energy, single pulse
E_AS
-
-
20
mJ I_D=20 A,R_GS=25 Ω
Gate source voltage
V_GS
-20 -
20
V
Power dissipation
P_tot
-
-
37
W T_C=25 °C
-
-
2.5
T_A=25 °C, R_thJA=50 K/W¹⁾)
Operating and storage temperature T_j,T_stg
-55 -
150
°C
IEC climatic category; DIN IEC 68-1
55/150/56
1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm² (one layer, 70 µm thick) copper area for drain connection.
PCB is vertical in still air.
2) See figure 3 for more detailed information
3) See figure 13 for more detailed information
3
Thermal characteristics
Table 3 Thermal characteristics
Parameter
Symbol
Min.
Values
Typ.
Max.
Unit Note /
Test Condition
Thermal resistance, junction - case R_thJC
-
-
3.4
K/W
-
-
20
top
Device on PCB
R_thJA
-
-
50
6 cm² cooling area¹⁾
1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm² (one layer, 70 µm thick) copper area for drain connection.
PCB is vertical in still air
Final Data Sheet
2
2.0, 2011-03-01