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| BFY193_11 Datasheet, PDF (3/4 Pages) Infineon Technologies AG – HiRel NPN Silicon RF Transistor | |||
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Electrical Characteristics (continued)
BFY193
Parameter
Symbol
min.
DC Characteristics
Base-Emitter forward voltage
IE = 30 mA, IC = 0
DC current gain
IC = 30 mA, VCE = 8 V
VFBE
-
hFE
50
AC Characteristics
Transition frequency
fT
IC = 40mA, VCE = 5 V, f = 500 MHz
6,5
IC = 50 mA, VCE = 8 V, f = 500 MHz
-
Collector-base capacitance
CCB
-
VCB = 10 V, VBE = vbe = 0, f = 1 MHz
Collector-emitter capacitance
CCE
-
VCE = 10 V, VBE = vbe = 0, f = 1 MHz
Emitter-base capacitance
CEB
-
VEB = 0.5V, VCB = vcb = 0, f = 1 MHz
Noise Figure
F
-
IC = 15 mA, VCE = 5 V, f = 2 GHz,
ZS = ZSopt
Power gain
Gma 1.) 12.5
IC = 40 mA, VCE = 5V, f = 2 GHz
ZS = ZSopt , ZL= ZLopt
Transducer gain
IC = 40 mA, VCE = 5 V, f = 2 GHz
ZS = ZL = 50 ï
Output Power
IC = 50 mA, VCE = 5 V, f = 2GHz,
PIN=10dBm, ZS = ZL = 50 ï
|S21e|2
8
POUT
16.5
Notes.:
1.)
Gma
ï½
S21 (k ï
S12
k 2 ï 1) ,
Gms
ï½
S 21
S12
Values
Unit
typ. max.
-
1
V
100 175 -
GHz
7.5
-
8
-
0.56 0.75 pF
0.34 -
pF
1.9
2.4 pF
2.3
2.9 dB
13.5 -
dB
9
-
dB
17.5 -
dBm
IFAG IMM RPD D HIR
3 of 4
V2, February 2011
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