English
Language : 

BFS481_07 Datasheet, PDF (3/6 Pages) Infineon Technologies AG – NPN Silicon RF Transistor
◁
BFS481
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
AC Characteristics (verified by random sampling)
Transition frequency
fT
IC = 10 mA, VCE = 8 V, f = 500 MHz
Collector-base capacitance
Ccb
VCB = 10 V, f = 1 MHz, VBE = 0 ,
emitter grounded
6
8
- GHz
- 0.23 0.4 pF
Collector emitter capacitance
VCE = 10 V, f = 1 MHz, VBE = 0 ,
base grounded
Cce
- 0.13 -
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz, VCB = 0 ,
collector grounded
Ceb
-
0.4
-
Noise figure
F
dB
IC = 2 mA, VCE = 8 V, ZS = ZSopt,
f = 900 MHz
-
0.9
-
IC = 2 mA, VCE = 8 V, ZS = ZSopt,
f = 1.8 GHz
-
1.2
-
Power gain, maximum stable1)
IC = 5 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt ,
f = 900 MHz
Gms
-
20
- dB
Power gain, maximum available2)
IC = 5 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt ,
f = 1.8 GHz
Gma
-
15
- dB
Transducer gain
IC = 5 mA, VCE = 8 V, ZS = ZL = 50 Ω,
f = 900 MHz
|S21e|2
dB
-
16
-
IC = 5 mA, VCE = 8 V, ZS = ZL = 50 Ω,
f = 1.8 MHz
-
11
-
1Gms = |S21 / S12|
2Gma = |S21e / S12e| (k-(k²-1)1/2)
2007-04-26
3
 ▷