BFS480 Datasheet, PDF (3/6 Pages) Siemens Semiconductor Group – NPN Silicon RF Transistor (For low noise, low-power amplifiers in mobile communication systems)

BFS480
Electrical Characteristics at T_A = 25°C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min. typ. max.
AC characteristics (verified by random sampling)
Transition frequency
f_T
I_C = 6 mA, V_CE = 5 V, f = 500 MHz
Collector-base capacitance
C_cb
V_CB = 5 V, f = 1 MHz
Collector-emitter capacitance
C_ce
V_CE = 5 V, f = 1 MHz
Emitter-base capacitance
C_eb
V_EB = 0.5 V, f = 1 MHz
Noise figure
F
I_C = 1.5 mA, V_CE = 5 V, Z_S = Z_Sopt ,
f = 900 MHz
f = 1.8 GHz
5
7.5
- GHz
- 0.23 0.4 pF
-
0.1
-
- 0.23 -
dB
-
1.5
-
-
2
-
Power gain, maximum stable ¹⁾
G_ms
I_C = 3 mA, V_CE = 5 V, Z_S = Z_Sopt, Z_L = Z_Lopt ,
f = 900 MHz
f = 1.8 GHz
-
18
-
-
14
-
Transducer gain
I_C = 3 mA, V_CE = 5 V, Z_S = Z_L = 50 ,
f = 900 MHz
f = 1.8 GHz
|S_21e|²
-
14
-
-
9.5
-
1_{Gms = |S21 / S12|}
3
Jun-27-2001