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BFR93A_07 Datasheet, PDF (3/7 Pages) Infineon Technologies AG – NPN Silicon RF Transistor
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BFR93A
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
min. typ. max.
AC Characteristics (verified by random sampling)
Transition frequency
IC = 30 mA, VCE = 8 V, f = 500 MHz
fT
4.5
6
-
Collector-base capacitance
VCB = 10 V, f = 1 MHz, VBE = 0 ,
emitter grounded
Ccb
- 0.54 0.8
Unit
GHz
pF
Collector emitter capacitance
VCE = 10 V, f = 1 MHz, VBE = 0 ,
base grounded
Cce
- 0.25 -
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz, VCB = 0 ,
collector grounded
Ceb
-
1.9
-
Noise figure
IC = 5 mA, VCE = 8 V, ZS = ZSopt,
f = 900 MHz
IC = 5 mA, VCE = 8 V, ZS = ZSopt,
f = 1.8 GHz
F
dB
-
1.5
-
-
2.6
-
Power gain, maximum available1)
IC = 30 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt ,
f = 900 MHz
IC = 30 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt,
f = 1.8 GHz
Gma
- 14.5 -
-
9.5
-
Transducer gain
IC = 30 mA, VCE = 8 V, ZS = ZL = 50 Ω,
f = 900 MHz
IC = 30 mA, VCE = 8 V, ZS = ZL = 50 Ω,
f = 1.8 MHz
|S 21e|2
dB
- 12.5 -
-
7
-
1Gma = |S21e / S12e| (k-(k²-1)1/2)
3
2007-04-26
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