BFR360T Datasheet, PDF (3/4 Pages) Infineon Technologies AG – NPN Silicon RF Transistor

BFR360T
Electrical Characteristics at T_A = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
AC Characteristics (verified by random sampling)
Transition frequency
f_T
I_C = 15 mA, V_CE = 3 V, f = 1 GHz
Collector-base capacitance
C_cb
V_CB = 5 V, f = 1 MHz, emitter grounded
Collector emitter capacitance
C_ce
V_CE = 5 V, f = 1 MHz, base grounded
Emitter-base capacitance
C_eb
V_EB = 0.5 V, f = 1 MHz, collector grounded
Noise figure
F_min
I_C = 3 mA, V_CE = 3 V, Z_S = Z_Sopt, Z_L = Z_Lopt,
f = 1.8 GHz
10 14
- GHz
- 0.34 0.5 pF
-
0.2
-
-
0.4
-
-
1
- dB
Power gain, maximum available¹⁾
I_C = 15 mA, V_CE = 3 V, Z_S = Z_Sopt ,
Z_L = Z_Lopt , f = 1.8 GHz
I_C = 15 mA, V_CE = 3 V, Z_S = Z_Sopt ,
Z_L = Z_Lopt , f = 3 GHz
G_ma
- 13.5 -
-
9.5
-
Transducer gain
I_C = 15 mA, V_CE = 3 V, Z_S = Z_L = 50 ,
f = 1.8 GHz
|S_21e|²
dB
-
12
-
I_C = 15 mA, V_CE = 3 V, Z_S = Z_L = 50 ,
f = 3 GHz
-
8
-
Third order intercept point at output²⁾
V_CE = 3 V, I_C = 15 mA, f = 1.8 GHz,
Z_S = Z_L = 50
1dB Compression point at output
I_C = 15 mA, V_CE = 3 V, Z_S = Z_L = 50 ,
f = 1.8 GHz
IP₃
-
25
- dBm
P_-1dB
-
9
-
1_{Gma = |S21e / S12e| (k-(k²-1)}1/2₎
2IP3 _{value depends on termination of all intermodulation frequency components.}

Termination used for this measurement is 50 from 0.1 MHz to 6 GHz
3
Jun-16-2003