BFR340L3_07 Datasheet, PDF (3/6 Pages) Infineon Technologies AG – NPN Silicon RF Transistor

BFR340L3
Electrical Characteristics at T_A = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
AC Characteristics (verified by random sampling)
Transition frequency
f_T
I_C = 6 mA, V_CE = 3 V, f = 1 GHz
Collector-base capacitance
C_cb
V_CB = 5 V, f = 1 MHz, V_BE = 0 ,
emitter grounded
10 14
- GHz
- 0.17 0.4 pF
Collector emitter capacitance
V_CE = 5 V, f = 1 MHz, V_BE = 0 ,
base grounded
C_ce
- 0.13 -
Emitter-base capacitance
V_EB = 0.5 V, f = 1 MHz, V_CB = 0 ,
collector grounded
C_eb
- 0.12 -
Noise figure
I_C = 1 mA, V_CE = 3 V, Z_S = Z_{Sopt ,} f = 1.8 GHz
Power gain, maximum stable¹⁾
I_C = 5 mA, V_CE = 3 V, Z_S = Z_Sopt ,
Z_L = Z_Lopt, f = 1.8 GHz
Power gain, maximum available¹⁾
I_C = 5 mA, V_CE = 3 V, Z_S = Z_Sopt ,
Z_L = Z_Lopt , f = 3 GHz
Transducer gain
I_C = 5 mA, V_CE = 3 V, Z_S = Z_L = 50Ω ,
f = 1.8 GHz
F_min
G_ms
G_ma
|S _21e|²
- 1.15 - dB
- 17.5 - -
-
13
- dB
dB
-
14
-
f = 3 GHz
-
10
-
Third order intercept point at output²⁾
V_CE = 3 V, I_C = 5 mA, f = 1.8 GHz,
Z_S = Z_L = 50Ω
1dB Compression point at output
I_C = 5 mA, V_CE = 3 V, Z_S = Z_L = 50Ω ,
f = 1.8 GHz
IP₃
- 12.5 - dBm
P_-1dB
-
-1
-
1_{Gma = |S21e / S12e| (k-(k²-1)1/2), Gms = |S21e / S12e|}
2_{IP3 value depends on termination of all intermodulation frequency components.}
Termination used for this measurement is 50Ω from 0.1 MHz to 6 GHz
3
2007-03-30