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BFR193W_14 Datasheet, PDF (3/6 Pages) Infineon Technologies AG – For low noise, high-gain amplifiers up to 2 GHz
BFR193W
Electrical Characteristics at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
AC Characteristics (verified by random sampling)
Transition frequency
IC = 50 mA, VCE = 8 V, f = 500 MHz
Collector-base capacitance
VCB = 10 V, f = 1 MHz, VBE = 0 ,
emitter grounded
fT
6
8
- GHz
Ccb
- 0.74 1 pF
Collector emitter capacitance
VCE = 10 V, f = 1 MHz, VBE = 0 ,
base grounded
Cce
- 0.28 -
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz, VCB = 0 ,
collector grounded
Ceb
-
1.8
-
Minimum noise figure
IC = 10 mA, VCE = 8 V, ZS = ZSopt,
f = 900 MHz
f = 1.8 GHz
NFmin
dB
-
1
-
-
1.6
-
Power gain, maximum available1)
IC = 30 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt,
f = 900 MHz
Gma
f = 1.8 GHz
-
16
-
- 10.5 -
Transducer gain
IC = 30 mA, VCE = 8 V, ZS = ZL = 50Ω,
f = 900 MHz
f = 1.8 GHz
|S21e|2
dB
- 13.5 -
-
8
-
Third order intercept point at output2)
IC = 30 mA, VCE = 8 V, ZS = ZL = 50 Ω,
f = 900 MHz
IP3
-
30
- dBm
1dB Compression point
IC = 30 mA, VCE = 8 V, ZS = ZL = 50 Ω,
f = 900 MHz
P-1dB
-
13
-
1Gma = |S21 / S12| (k-(k²-1)1/2)
2IP3 value depends on termination of all intermodulation frequency components.
Termination used for this measurement is 50Ω from 0.2 MHz to 12 GHz
3
2014-04-07