BFR193L3_07 Datasheet, PDF (3/6 Pages) Infineon Technologies AG – NPN Silicon RF Transistor

BFR193L3
Electrical Characteristics at T_A = 25°C, unless otherwise specified
Parameter
Symbol
Values
min. typ. max.
AC Characteristics (verified by random sampling)
Transition frequency
I_C = 50 mA, V_CE = 8 V, f = 500 MHz
f_T
6
8
-
Collector-base capacitance
V_CB = 10 V, f = 1 MHz, V_BE = 0 ,
emitter grounded
C_cb
- 0.63 0.9
Unit
GHz
pF
Collector emitter capacitance
V_CE = 10 V, f = 1 MHz, V_BE = 0 ,
base grounded
C_ce
- 0.22 -
Emitter-base capacitance
V_EB = 0.5 V, f = 1 MHz, V_CB = 0 ,
collector grounded
C_eb
- 2.25 -
Noise figure
I_C = 10 mA, V_CE = 8 V, Z_S = Z_Sopt ,
f = 900 MHz
I_C = 10 mA, V_CE = 8 V, Z_S = Z_Sopt ,
f = 1.8 GHz
F
dB
-
1
-
-
1.6
-
Power gain, maximum available¹⁾
I_C = 30 mA, V_CE = 8 V, Z_S = Z_Sopt ,
Z_L = Z_Lopt , f = 900 MHz
I_C = 30 mA, V_CE = 8 V, Z_S = Z_Sopt ,
Z_L = Z_Lopt , f = 1.8 GHz
Transducer gain
I_C = 30 mA, V_CE = 8 V, Z_S = Z_L = 50Ω ,
f = 900 MHz
I_C = 30 mA, V_CE = 8 V, Z_S = Z_L = 50Ω ,
f = 1.8 GHz
G_ma
|S _21e|²
-
19
-
- 12.5 -
dB
- 14.5 -
-
9
-
1_{Gma = |S21 / S12| (k-(k²-1)}1/2)
3
2007-03-30