BFR193F_13 Datasheet, PDF (3/6 Pages) Infineon Technologies AG – Low Noise Silicon Bipolar RF Transistor

BFR193F
Electrical Characteristics at T_A = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
AC Characteristics (verified by random sampling)
Transition frequency
f_T
I_C = 50 mA, V_CE = 8 V, f = 500 MHz
Collector-base capacitance
C_cb
V_CB = 10 V, f = 1 MHz, V_BE = 0, emitter grounded
Collector emitter capacitance
C_ce
V_CE = 10 V, f = 1 MHz, V_BE = 0, base grounded
Emitter-base capacitance
C_eb
V_EB = 0.5 V, f = 1 MHz, V_CB = 0 ,
collector grounded
6
8
- GHz
- 0.63 1 pF
- 0.25 -
- 2.25 -
Minimum noise figure
I_C = 10 mA, V_CE = 8 V, Z_S = Z_Sopt ,
f = 900 MHz
NF_min
dB
-
1
-
f = 1.8 GHz
-
1.6
-
Power gain, maximum stable¹⁾
I_C = 30 mA, V_CE = 8 V, Z_S = Z_Sopt,
Z_L = Z_Lopt , f = 900 MHz
Power gain, maximum available¹⁾
I_C = 30 mA, V_CE = 8 V, Z_S = Z_Sopt ,
Z_L = Z_Lopt , f = 1.8 GHz
Transducer gain
I_C = 30 mA, V_CE = 8 V, Z_S=Z_L=50Ω, f = 900 MHz
f = 1.8 GHz
G_ms
G_ma
|S_21e|²
- 12.5 - dB
-
19
- dB
dB
- 14.5 -
-
8.5
-
Third order intercept point at output²⁾
V_CE = 8 V, I_C = 30 mA, f = 900 MHz,
Z_S = Z_L = 50 Ω
1dB compression point at output³⁾
I_C = 30 mA, V_CE = 8 V, Z_S = Z_L = 50 Ω,
f = 900 MHz
IP₃
-
29
- dBm
P_-1dB
- 14.5 -
1_{Gma = |S21 / S12| (k-(k²-1)}1/2), _{Gms = |S21 / S12|}
2_{IP3 value depends on termination of all intermodulation frequency components.}
Termination used for this measurement is 50Ω from 0.1 MHz to 6 GHz
3_{DC current at no input power}
3
2013-11-07