BFP460_13 Datasheet, PDF(3/10 Page) Infineon Technologies AG – Low Noise Silicon Bipolar RF Transistor

English

English German Russian Spanish Italian Polish Chinese Japanese Korean French Portuguese	Language :

BFP460_13 Datasheet, PDF (3/10 Pages) Infineon Technologies AG – Low Noise Silicon Bipolar RF Transistor

◁

BFP460

Electrical Characteristics at TA = 25 Â°C, unless otherwise specified

Parameter

Symbol

Values

min. typ.

AC Characteristics (verified by random sampling)

Transition frequency

IC = 30 mA, VCE = 3 V, f = 1 GHz

16 22

Collector-base capacitance

VCB = 3 V, f = 1 MHz, VBE = 0 ,

emitter grounded

Ccb

- 0.32

max.

0.45

Unit

GHz

Collector emitter capacitance

VCE = 3 V, f = 1 MHz, VBE = 0 ,

base grounded

Cce

- 0.28 -

Emitter-base capacitance

VEB = 0.5 V, f = 1 MHz, VCB = 0 ,

collector grounded

Ceb

- 0.55 -

Minimum noise figure

VCE = 2V, IC = 3 mA , ZS = ZSopt, f = 100 MHz

VCE = 3V, IC = 5 mA , ZS = ZSopt, f = 1.8 GHz

VCE = 3V, IC = 5 mA , ZS = ZSopt, f = 3 GHz

NFmin

0.7

1.1

1.2

2013-09-13

▷