BFP420F_07 Datasheet, PDF(3/7 Page) Infineon Technologies AG

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BFP420F_07 Datasheet, PDF (3/7 Pages) Infineon Technologies AG – NPN Silicon RF Transistor

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BFP420F

Electrical Characteristics at TA = 25Â°C, unless otherwise specified

Parameter

Symbol

Values

Unit

min. typ. max.

AC Characteristics (verified by random sampling)

Transition frequency

IC = 30 mA, VCE = 3 V, f = 2 GHz

Collector-base capacitance

Ccb

VCB = 2 V, f = 1 MHz, VBE = 0 ,

emitter grounded

18 25

- GHz

- 0.15 0.3 pF

Collector emitter capacitance

VCE = 2 V, f = 1 MHz, VBE = 0 ,

base grounded

Cce

- 0.33 -

Emitter-base capacitance

VEB = 0.5 V, f = 1 MHz, VCB = 0 ,

collector grounded

Ceb

0.5

Noise figure

1.1

- dB

IC = 5 mA, VCE = 2 V, f = 1.8 GHz, ZS = ZSopt

Power gain, maximum available1)

IC = 20 mA, VCE = 2 V, ZS = ZSopt, ZL = ZLopt,

f = 1.8 GHz

Gma

- 19.5 -

Insertion power gain

VCE = 2 V, IC = 20 mA, f = 1.8 GHz,

ZS = ZL = 50 â¦

Third order intercept point at output2)

VCE = 2 V, IC = 20 mA, f = 1.8 GHz,

ZS = ZL = 50 â¦

1dB Compression point at output

IC = 20 mA, VCE = 2 V, ZS = ZL = 50 â¦,

f = 1.8 GHz

|S21|2

- 16.5 - dB

IP3

- dBm

P-1dB

- 10.5 -

1Gma = |S21e / S12e| (k-(kÂ²-1)1/2)

2IP3 value depends on termination of all intermodulation frequency components.

Termination used for this measurement is 50â¦ from 0.1 MHz to 6 GHz

2007-04-20

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