BFP410_13 Datasheet, PDF (3/8 Pages) Infineon Technologies AG – Low Noise Silicon Bipolar RF Transistor

BFP410
Electrical Characteristics at T_A = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
AC Characteristics (verified by random sampling)
Transition frequency
I_C = 20 mA, V_CE = 2 V, f = 2 GHz
Collector-base capacitance
V_CB = 2 V, f = 1 MHz, V_BE = 0 ,
emitter grounded
f_T
18 25
- GHz
C_cb
- 0.09 0.17 pF
Collector emitter capacitance
V_CE = 2 V, f = 1 MHz, V_BE = 0 ,
base grounded
C_ce
- 0.35 -
Emitter-base capacitance
V_EB = 0.5 V, f = 1 MHz, V_CB = 0 ,
collector grounded
C_eb
- 0.45 -
Minimum noise figure
I_C = 2 mA, V_CE = 2 V, f = 2 GHz, Z_S = Z_Sopt
Power gain, maximum stable¹⁾
I_C = 20 mA, V_CE = 2 V, Z_S = Z_Sopt,
Z_L = Z_Lopt , f = 2 GHz
Insertion power gain
V_CE = 2 V, I_C = 20 mA, f = 2 GHz,
Z_S = Z_L = 50 Ω
Third order intercept point at output²⁾
V_CE = 2 V, I_C = 20 mA, f = 2 GHz,
Z_S = Z_L = 50 Ω
1dB compression point at output
I_C = 20 mA, V_CE = 2 V, Z_S = Z_L = 50 Ω,
f = 2 GHz
NF_min
G_ms
|S₂₁|²
IP3
P_-1dB
-
1.2
- dB
- 21.5 - dB
- 18.5 -
- 23.5 - dBm
- 10.5 -
1_{Gms = |S21 / S12|}
2_{IP3 value depends on termination of all intermodulation frequency components.}
Termination used for this measurement is 50Ω from 0.1 MHz to 6 GHz
3
2013-08-16