BFP193_14 Datasheet, PDF (3/6 Pages) Infineon Technologies AG – Low Noise Silicon Bipolar RF Transistor

BFP193
Electrical Characteristics at T_A = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
AC Characteristics (verified by random sampling)
Transition frequency
I_C = 50 mA, V_CE = 8 V, f = 500 MHz
Collector-base capacitance
V_CB = 10 V, f = 1 MHz, V_BE = 0 ,
emitter grounded
f_T
6
8
- GHz
C_cb
- 0.59 0.9 pF
Collector emitter capacitance
V_CE = 10 V, f = 1 MHz, V_BE = 0 ,
base grounded
C_ce
- 0.28 -
Emitter-base capacitance
V_EB = 0.5 V, f = 1 MHz, V_CB = 0 ,
collector grounded
C_eb
- 2.25 -
Minimum noise figure
I_C = 10 mA, V_CE = 8 V, Z_S = Z_Sopt,
f = 900 MHz
f = 1.8 GHz
NF_min
dB
-
1
-
-
1.6
-
Power gain, maximum available¹⁾
G_ma
I_C = 30 mA, V_CE = 8 V, Z_S = Z_Sopt, Z_L = Z_Lopt,
f = 900 MHz
f = 1.8 GHz
-
18
-
-
12
-
Transducer gain
I_C = 30 mA, V_CE = 8 V, Z_S = Z_L = 50Ω,
f = 900 MHz
f = 1.8 GHz
|S_21e|²
dB
- 14.5 -
-
8.5
-
Third order intercept point at output²⁾
I_C = 30 mA, V_CE = 8 V, Z_S = Z_L = 50 Ω,
f = 900 MHz
IP₃
- 29.5 - dBm
1dB Compression point
I_C = 30 mA, V_CE = 8 V, Z_S = Z_L = 50 Ω,
f = 900 MHz
P_-1dB
-
13
-
1_{Gma = |S21 / S12| (k-(k²-1)}1/2)
2_{IP3 value depends on termination of all intermodulation frequency components.}
Termination used for this measurement is 50Ω from 0.2 MHz to 12 GHz
3
2014-04-07