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BFP182W_07 Datasheet, PDF (3/7 Pages) Infineon Technologies AG – NPN Silicon RF Transistor
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BFP182W
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
min. typ. max.
AC Characteristics (verified by random sampling)
Transition frequency
IC = 15 mA, VCE = 8 V, f = 500 MHz
fT
6
8
-
Collector-base capacitance
VCB = 10 V, f = 1 MHz, VBE = 0 ,
emitter grounded
Ccb
- 0.34 0.5
Unit
GHz
pF
Collector emitter capacitance
VCE = 10 V, f = 1 MHz, VBE = 0 ,
base grounded
Cce
- 0.27 -
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz, VCB = 0 ,
collector grounded
Ceb
-
0.8
-
Noise figure
IC = 3 mA, VCE = 6 V, ZS = ZSopt,
f = 900 MHz
IC = 3 mA, VCE = 6 V, ZS = ZSopt,
f = 1.8 GHz
F
dB
-
0.9
-
-
1.3
-
Power gain, maximum stable1)
IC = 10 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt ,
f = 900 MHz
Gms
-
22
- dB
Power gain, maximum available2)
IC = 10 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt ,
f = 1.8 GHz
Gma
- 16.5 - dB
Transducer gain
IC = 10 mA, VCE = 8 V, ZS = ZL = 50 Ω,
f = 900 MHz
IC = 10 mA, VCE = 8 V, ZS = ZL = 50 Ω,
f = 1.8 GHz
|S21e|2
dB
-
18
-
-
12
-
1Gms = |S21 / S12|
2Gma = |S21e / S12e| (k-(k²-1)1/2)
2007-04-20
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