BF770A Datasheet, PDF (3/3 Pages) Siemens Semiconductor Group – NPN Silicon RF Transistor (For IF amplifiers in TV-sat tuners and for VCR modulators)

BF 770A
Electrical Characteristics at T_A = 25°C, unless otherwise specified.
Parameter
Symbol
Values
min. typ.
AC characteristics (verified by random sampling)
Transition frequency
I_C = 30 mA, V_CE = 8 V, f = 500 MHz
Collector-base capacitance
V_CB = 10 V, f = 1 MHz
Collector-emitter capacitance
V_CE = 10 V, f = 1 MHz
Emitter-base capacitance
V_EB = 0.5 V, f = 1 MHz
f_T
4.5
6
C_cb
- 0.58
C_ce
- 0.23
C_eb
-
1.7
Noise figure
F
I_C = 5 mA, V_CE = 8 V, Z_S = Z_Sopt ,
f = 900 MHz
-
2
f = 1.8 GHz
-
3.3
max.
-
0.9
-
-
-
-
Unit
GHz
pF
dB
Power gain, maximum available ¹⁾
G_ma
I_C = 30 mA, V_CE = 8 V, Z_S = Z_Sopt, Z_L = Z_Lopt ,
f = 900 MHz
f = 1.8 GHz
- 13.5 -
-
8.5
-
Transducer gain

I_C = 30 mA, V_CE = 8 V, Z_S = Z_L = 50 ,
f = 900 MHz
f = 1.8 GHz
|S_21e|²
-
12
-
-
6.5
-
1_{Gma = |S21 / S12| (k-(k}2_-1)1/2₎
3
Oct-26-1999