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BCV27_07 Datasheet, PDF (3/8 Pages) Infineon Technologies AG – NPN Silicon Darlington Transistors
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BCV27, BCV47
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 10 mA, IB = 0 , BCV27
IC = 10 mA, IB = 0 , BCV47
V(BR)CEO
30
-
-
60
-
-
Collector-base breakdown voltage
IC = 100 µA, IE = 0 , BCV27
IC = 100 µA, IE = 0 , BCV47
V(BR)CBO
40
-
-
80
-
-
Emitter-base breakdown voltage
IE = 10 µA, IC = 0
V(BR)EBO 10
-
-
Collector-base cutoff current
VCB = 30 V, IE = 0 , BCV27
VCB = 60 V, IE = 0 , BCV47
VCB = 30 V, IE = 0 , TA = 150 °C, BCV27
VCB = 60 V, IE = 0 , TA = 150 °C, BCV47
I CBO
-
-
0.1
-
-
0.1
-
-
10
-
-
10
Emitter-base cutoff current
VEB = 4 V, IC = 0
DC current gain1)
IC = 100 µA, VCE = 1 V, BCV27
IC = 100 µA, VCE = 1 V, BCV47
IC = 10 mA, VCE = 5 V, BCV27
IC = 10 mA, VCE = 5 V, BCV47
IC = 100 mA, VCE = 5 V, BCV27
IC = 100 mA, VCE = 5 V, BCV47
IC = 0.5 A, VCE = 5 V, BCV27
IC = 0.5 A, VCE = 5 V, BCV47
I EBO
-
- 100
hFE
4000 -
-
2000 -
-
10000 -
-
4000 -
-
20000 -
-
10000 -
-
4000 -
-
2000 -
-
Unit
-
V
µA
nA
-
Collector-emitter saturation voltage1)
IC = 100 mA, IB = 0.1 mA
Base emitter saturation voltage1)
IC = 100 mA, IB = 0.1 mA
1Pulse test: t < 300µs; D < 2%
VCEsat
-
-
1V
VBEsat
-
-
1.5
3
2007-04-20
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