BCR562_07 Datasheet, PDF (3/6 Pages) Infineon Technologies AG – PNP Silicon Digital Transistor

BCR562
DC current gain h_FE = ƒ(I_C)
V_CE = 5 V (common emitter configuration)
Collector-emitter saturation voltage
V_CEsat = ƒ(I_C), h_FE = 20
10 ³
-40 °C
-25 °C
25 °C
85 °C
10 ²
125 °C
10 ¹
10 ⁰
10
-1
10
-4
10 ^-3
10 ^-2
10 ^-1 A 10 ⁰
I_C
Input on Voltage Vi_(on) = ƒ(I_C)
V_CE = 0.3V (common emitter configuration)
1
V
0.8
0.7
0.6
0.5
0.4
-40 °C
-25 °C
0.3
25 °C
85 °C
125 °C
0.2
0.1
0
10
-3
10 ^-2
10 ^-1
A
10 ⁰
I_C
Input off voltage V_i(off) = ƒ(I_C)
V_CE = 5V (common emitter configuration)
10 ²
V
-40 °C
-25 °C
25 °C
85 °C
125 °C
10 ¹
10 ¹
-40 °C
-25 °C
V _{25 °C}
85 °C
125 °C
10 ⁰
10 ⁰
10
-1
10
-4
10 ^-3
10 ^-2
10 ^-1 A 10 ⁰
I_C
10
-1
10
-5
3
10 ^-4
10 ^-3
A
10 ^-2
I_C
2007-07-24